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IPD40N03S4L08ATMA1

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IPD40N03S4L08ATMA1

MOSFET N-CH 30V 40A TO252-31

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies' OptiMOS™ IPD40N03S4L08ATMA1 is an N-Channel power MOSFET designed for demanding automotive applications. This component offers a 30V drain-source voltage (Vdss) and a continuous drain current (Id) capability of 40A at 25°C, with a maximum power dissipation of 42W (Tc). Featuring a low on-resistance of 8.3mOhm at 40A and 10V Vgs, it is optimized for efficient switching. The device operates with a drive voltage range of 4.5V to 10V and has a gate charge (Qg) of 20 nC at 10V. Its surface mountable TO-252-3, DPAK (SC-63) package ensures robust thermal performance and ease of integration. Qualified to AEC-Q101 standards, the IPD40N03S4L08ATMA1 is suitable for power management, motor control, and power distribution systems in the automotive industry. It operates across a wide temperature range of -55°C to 175°C (TJ).

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C40A (Tc)
Rds On (Max) @ Id, Vgs8.3mOhm @ 40A, 10V
FET Feature-
Power Dissipation (Max)42W (Tc)
Vgs(th) (Max) @ Id2.2V @ 13µA
Supplier Device PackagePG-TO252-3-11
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1520 pF @ 15 V
QualificationAEC-Q101

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