IPD40DP06NMATMA1
MOSFET P-CH 60V 4.3A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD40DP06NMATMA1 is a P-channel Power MOSFET designed for high-performance applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) of 4.3A at 25°C, with a maximum power dissipation of 19W (Tc). The Rds(On) is specified at 400mOhm maximum at 4.3A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 6.7 nC (max) at 10V and an input capacitance (Ciss) of 260 pF (max) at 30V. The device operates across a temperature range of -55°C to 175°C (TJ) and is supplied in a PG-TO252-3-313 package, suitable for surface mounting. This MOSFET is commonly utilized in power supply units, automotive electronics, and industrial control systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 4.3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 19W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 166µA |
| Supplier Device Package | PG-TO252-3-313 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 260 pF @ 30 V |
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