IPD350N06LGBUMA1
MOSFET N-CH 60V 29A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ IPD350N06LGBUMA1 is a 60V N-channel power MOSFET in a PG-TO252-3 package, designed for efficient power switching applications. This device offers a continuous drain current of 29A (Tc) and a low on-resistance (Rds On) of 35mOhm at 29A and 10V Vgs. Key electrical characteristics include a gate charge (Qg) of 13 nC (max) at 5V Vgs and input capacitance (Ciss) of 800 pF (max) at 30V Vds. The MOSFET supports a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 2V (max) at 28µA. With a maximum power dissipation of 68W (Tc) and an operating temperature range of -55°C to 175°C (TJ), this component is suitable for use in the automotive and industrial sectors. The IPD350N06LGBUMA1 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 29A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 28µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 30 V |
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