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IPD30N12S3L31ATMA1

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IPD30N12S3L31ATMA1

MOSFET N-CHANNEL_100+

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

N-Channel 120 V 30A (Tc) 57W Surface Mount PG-TO252-3-11

Additional Information

Series: OptiMOS®-TRoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs31mOhm @ 30A, 10V
FET Feature-
Power Dissipation (Max)57W
Vgs(th) (Max) @ Id2.4V @ 29µA
Supplier Device PackagePG-TO252-3-11
GradeAutomotive
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)120 V
Gate Charge (Qg) (Max) @ Vgs24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1970 pF @ 25 V
QualificationAEC-Q101

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