IPD30N06S4L23ATMA1
MOSFET N-CH 60V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD30N06S4L23ATMA1 is a surface-mount N-Channel Power MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 60V and a continuous Drain Current (Id) capability of 30A at 25°C (Tc). The low on-resistance (Rds On) of 23mOhm at 30A and 10V gate-source voltage, coupled with a maximum power dissipation of 36W (Tc), ensures high efficiency. Key parameters include a Gate Charge (Qg) of 21 nC at 10V and input capacitance (Ciss) of 1560 pF at 25V. The MOSFET operates across a temperature range of -55°C to 175°C (TJ) and is supplied in a PG-TO252-3-11 package, commonly known as TO-252-3 or DPAK. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 10µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±16V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1560 pF @ 25 V |
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