IPD30N06S2L23ATMA1
MOSFET N-CH 55V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD30N06S2L23ATMA1 is an N-Channel Power MOSFET designed for high-efficiency power switching applications. This device features a Drain-Source Voltage (Vdss) of 55V and a continuous drain current (Id) of 30A at 25°C, with a maximum power dissipation of 100W (Tc). The Rds(on) is specified at a low 23mOhm at 22A and 10V Vgs.
Key parameters include a gate charge (Qg) of 42 nC at 10V Vgs and an input capacitance (Ciss) of 1091 pF at 25V Vds. The MOSFET operates with a gate-source voltage range of ±20V, and a threshold voltage (Vgs(th)) of 2V at 50µA. It is housed in a PG-TO252-3-11 package, also known as TO-252-3 or DPAK, suitable for surface mounting. This component is engineered for demanding applications across various industries, including automotive, industrial power, and consumer electronics. The operating temperature range is -55°C to 175°C (TJ). The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1091 pF @ 25 V |
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