IPD30N06S2L-13
MOSFET N-CH 55V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD30N06S2L-13 is a surface-mount N-Channel Power MOSFET designed for high-efficiency power management applications. This component features a 55 V drain-source voltage (Vdss) and a continuous drain current (Id) of 30 A at 25°C, with a maximum power dissipation of 136 W (Tc). The ON-resistance (Rds On) is a low 13 mOhm at 30 A and 10 V gate-source voltage (Vgs), enabling reduced conduction losses. Key electrical characteristics include a maximum gate charge (Qg) of 69 nC at 10 V and an input capacitance (Ciss) of 1800 pF at 25 V.
The IPD30N06S2L-13 utilizes advanced MOSFET technology and is housed in a PG-TO252-3-11 (TO-252-3, DPAK) package, suitable for automated assembly. It operates across a wide temperature range of -55°C to 175°C. This device is commonly employed in power supplies, motor control, and automotive electronics where robust performance and thermal management are critical. The drive voltage range for optimal Rds On is between 4.5 V and 10 V, with a maximum Vgs rating of ±20V. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 13mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 80µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 69 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
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