IPD30N06S223ATMA1
MOSFET N-CH 55V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD30N06S223ATMA1 is an N-Channel Power MOSFET designed for high-efficiency applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 30A at 25°C. The on-resistance (Rds On) is specified at a maximum of 23mOhm at 21A and 10V gate-source voltage. With a maximum power dissipation of 100W (Tc), it is suitable for demanding thermal environments. The device operates within a temperature range of -55°C to 175°C. Key characteristics include a gate charge (Qg) of 32 nC at 10V and input capacitance (Ciss) of 901 pF at 25V. The IPD30N06S223ATMA1 utilizes a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface-mount package, supplied in tape and reel. This MOSFET is commonly employed in automotive, industrial power, and consumer electronics sectors where robust power switching is required.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 21A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 50µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 901 pF @ 25 V |
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