IPD30N06S2-15
MOSFET N-CH 55V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ series IPD30N06S2-15 is an N-Channel power MOSFET designed for demanding applications. This component features a 55V drain-source voltage (Vdss) and a continuous drain current capability of 30A at 25°C (Tc). The device exhibits a maximum on-resistance (Rds On) of 14.7mOhm at 30A and 10V gate-source voltage (Vgs). With a maximum power dissipation of 136W (Tc), it is suitable for power switching and motor control applications across automotive and industrial sectors. Key electrical parameters include a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 1485 pF at 25V. The IPD30N06S2-15 is supplied in a PG-TO252-3-11 package, facilitating surface mounting, and operates within a temperature range of -55°C to 175°C. It is available in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1485 pF @ 25 V |
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