IPD30N03S2L20ATMA1
MOSFET N-CH 30V 30A TO252-31Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD30N03S2L20ATMA1 is an N-Channel Power MOSFET designed for demanding applications. It features a 30V drain-source breakdown voltage and a continuous drain current capability of 30A at 25°C (Tc), with a maximum power dissipation of 60W (Tc). The low on-resistance of 20mOhm at 18A and 10V Vgs makes it suitable for efficient power switching. This component utilizes a surface mountable PG-TO252-3-11 package (TO-252-3, DPAK) and operates across a wide temperature range from -55°C to 175°C (TJ). Key electrical parameters include a gate charge (Qg) of 19 nC (max) at 10V and an input capacitance (Ciss) of 530 pF (max) at 25V. It is compatible with drive voltages from 4.5V to 10V and has a maximum gate-source voltage of ±20V. This MOSFET is utilized in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 12 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 18A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 23µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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