IPD30N03S2L10ATMA1
MOSFET N-CH 30V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPD30N03S2L10ATMA1, is a surface mount device in a TO-252-3 (DPAK) package. This component features a drain-source voltage (Vdss) of 30 V and a continuous drain current (Id) of 30 A at 25°C (Tc). The low on-resistance (Rds On) is specified at a maximum of 10 mOhm at 30 A and 10 Vgs. With a maximum power dissipation of 100 W (Tc) and a junction temperature range of -55°C to 175°C, this MOSFET is designed for demanding applications. Key electrical parameters include a gate charge (Qg) of 42 nC (max) at 10 Vgs and input capacitance (Ciss) of 1200 pF (max) at 25 Vds. The device supports gate-source voltages up to ±20 V and has a threshold voltage (Vgs(th)) of 2 V at 50µA. This component finds utility in automotive and industrial power management systems. It is supplied on tape and reel.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 50µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
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