IPD30N03S2L07ATMA1
MOSFET N-CH 30V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPD30N03S2L07ATMA1, features a 30 V drain-source voltage and a continuous drain current of 30 A at 25°C. This device offers a low on-resistance of 6.7 mOhm maximum at 30 A and 10 V, with a gate drive requirement of 4.5 V to 10 V. The MOSFET is constructed with a surface mount design in a TO-252-3, DPAK package, enabling efficient thermal management with a maximum power dissipation of 136 W at 25°C. With a gate charge of 68 nC at 10 V and input capacitance of 1900 pF at 25 V, it supports high-frequency switching applications. Its operating temperature range is -55°C to 175°C. This component is suitable for various industrial applications including power supplies and motor control. The device is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.7mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 85µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |