IPD26N06S2L35ATMA1
MOSFET N-CH 55V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD26N06S2L35ATMA1 is an N-Channel Power MOSFET in a TO-252-3 (DPAK) package, suitable for surface mounting. This component offers a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 30A at 25°C. With a maximum on-resistance (Rds On) of 35mOhm at 13A and 10V, it exhibits low conduction losses. The device features a gate charge (Qg) of 24 nC at 10V and an input capacitance (Ciss) of 621 pF at 25V. Its maximum power dissipation is rated at 68W (Tc). This MOSFET is designed for operation across a temperature range of -55°C to 175°C (TJ). It is commonly utilized in automotive and industrial power management applications. The component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 26µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 621 pF @ 25 V |
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