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IPD25N06S4L30ATMA1

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IPD25N06S4L30ATMA1

MOSFET N-CH 60V 25A TO252-31

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ IPD25N06S4L30ATMA1 is a high-performance N-Channel power MOSFET designed for demanding applications. This component features a 60 V drain-source breakdown voltage and a continuous drain current capability of 25 A at 25°C (Tc). The device offers a low on-resistance (Rds On) of 30 mOhm maximum at 25 A and 10 V Vgs, facilitating efficient power transfer. With a maximum power dissipation of 29 W (Tc), it is suitable for surface mount installations utilizing the PG-TO252-3-11 package. Key electrical characteristics include a gate charge (Qg) of 16.3 nC at 10 V Vgs and an input capacitance (Ciss) of 1220 pF at 25 V Vds. The operating temperature range spans from -55°C to 175°C (TJ). This MOSFET is commonly employed in automotive, industrial power, and power supply applications where robust performance and thermal management are critical.

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C25A (Tc)
Rds On (Max) @ Id, Vgs30mOhm @ 25A, 10V
FET Feature-
Power Dissipation (Max)29W (Tc)
Vgs(th) (Max) @ Id2.2V @ 8µA
Supplier Device PackagePG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±16V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1220 pF @ 25 V

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