IPD25N06S240ATMA1
MOSFET N-CH 55V 29A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD25N06S240ATMA1 is an N-channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vds) of 55V and a continuous drain current (Id) of 29A at 25°C, dissipating up to 68W (Tc). The Rds(On) is specified at a maximum of 40mOhm at 13A and 10V Vgs. Key parameters include a gate charge (Qg) of 18 nC (max) at 10V Vgs and input capacitance (Ciss) of 513 pF (max) at 25V Vds. The device operates within a temperature range of -55°C to 175°C (TJ). Mounting is surface mount, utilizing the TO-252-3, DPAK (2 Leads + Tab), SC-63 package. This MOSFET is employed in industries such as automotive and industrial power management. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 29A (Tc) |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 68W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 26µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 18 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 513 pF @ 25 V |
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