IPD25DP06LMATMA1
MOSFET P-CH 60V 6.5A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ IPD25DP06LMATMA1 is a P-Channel Power MOSFET designed for demanding applications. This component features a 60V drain-source breakdown voltage and a continuous drain current capability of 6.5A at 25°C case temperature, with a maximum power dissipation of 28W (Tc). The device exhibits a low on-resistance of 250mOhm at 6.5A and 10V Vgs. It supports gate drive voltages from 4.5V to 10V and has a maximum gate charge of 13.8 nC at 10V Vgs. The input capacitance (Ciss) is rated at 420 pF at 30V. Housed in a surface-mount PG-TO252-3-313 package, this MOSFET is suitable for power management and switching applications across automotive and industrial sectors, operating within a temperature range of -55°C to 175°C. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 250mOhm @ 6.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 28W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 270µA |
| Supplier Device Package | PG-TO252-3-313 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 13.8 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 30 V |
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