IPD250N06N3GBTMA1
MOSFET N-CH 60V 28A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD250N06N3GBTMA1 is a 60V N-channel Power MOSFET designed for high-efficiency power management applications. This device features a low on-resistance (Rds(on)) of 25mOhm at 28A and 10V Vgs, contributing to reduced conduction losses. With a continuous drain current capability of 28A (Tc) and a maximum power dissipation of 36W (Tc), it is suitable for demanding power conversion tasks. The MOSFET offers a gate charge of 15 nC (max) at 10V and an input capacitance of 1200 pF (max) at 30V. It is housed in a PG-TO252-3 (DPAK) surface-mount package, facilitating automated assembly. Operating across a wide temperature range of -55°C to 175°C (TJ), this component is commonly found in automotive, industrial, and consumer electronics power supplies and motor control systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 28A (Tc) |
| Rds On (Max) @ Id, Vgs | 25mOhm @ 28A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 11µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 30 V |
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