IPD220N06L3GBTMA1
MOSFET N-CH 60V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPD220N06L3GBTMA1 is a 60V N-Channel Power MOSFET in a PG-TO252-3 package, suitable for surface mounting. This device achieves a low on-resistance of 22mOhm at 30A and a gate-source voltage of 10V, with a continuous drain current capability of 30A at 25°C. Key parameters include a gate charge (Qg) of 10 nC at 4.5V and input capacitance (Ciss) of 1600 pF at 30V. The MOSFET offers a maximum power dissipation of 36W (Tc) and operates across a temperature range of -55°C to 175°C. This component is commonly employed in automotive applications, power management, and industrial automation. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 36W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 11µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 30 V |