IPD20N03L G
MOSFET N-CH 30V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD20N03L-G is an N-channel power MOSFET with a Drain-Source Voltage (Vdss) of 30V. It offers a continuous drain current (Id) of 30A at 25°C and a maximum power dissipation of 42W at the same temperature. The device features a low on-resistance (Rds On) of 20mOhm at 15A and 10V, with a typical gate threshold voltage (Vgs(th)) of 2V at 25µA. Gate drive voltages range from 4.5V to 10V for optimal Rds(on) performance. Input capacitance (Ciss) is 695pF at 25V, and gate charge (Qg) is 19nC at 5V. This component is suitable for surface mounting in a TO-252-3, DPAK package and operates across a wide temperature range from -55°C to 175°C. It is frequently utilized in automotive and industrial applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 25µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 695 pF @ 25 V |
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