IPD20N03L
MOSFET N-CH 30V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies presents the OptiMOS™ IPD20N03L, an N-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 30A at 25°C (Tc), this device offers a low Rds(on) of 20mOhm at 15A and 10V Vgs. The IPD20N03L supports a gate drive range from 4.5V to 10V, with a maximum Gate Charge (Qg) of 11 nC at 5V Vgs and an Input Capacitance (Ciss) of 700 pF at 25V Vds. Its maximum power dissipation is 60W (Tc), and it operates within an extended temperature range of -55°C to 175°C (TJ). Packaged in the TO-252-3, DPAK (SC-63) surface-mount form factor and supplied on Tape & Reel (TR), this MOSFET is suitable for automotive, industrial power control, and high-efficiency switching applications.
Additional Information
Series: Optimos™RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 60W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 25µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
Request a Quote
Clients Also Buy
BSS308PEH6327XTSA1
MOSFET P-CH 30V 2A SOT23-3
BSZ086P03NS3EGATMA1
MOSFET P-CH 30V 13.5A/40A TSDSON
BSL606SNH6327XTSA1
MOSFET N-CH 60V 4.5A TSOP-6
