IPD200N15N3GBTMA1
MOSFET N-CH 150V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPD200N15N3GBTMA1, offers 150V drain-source breakdown voltage and 50A continuous drain current at 25°C (Tc). This surface mount device, packaged in a PG-TO252-3 (TO-252-3, DPAK) configuration, features a low 20mOhm maximum on-resistance at 50A and 10V Vgs. Key electrical characteristics include a maximum power dissipation of 150W (Tc), input capacitance of 1820pF (max) at 75V Vds, and gate charge of 31nC (max) at 10V Vgs. Designed for efficient power conversion, this MOSFET is suitable for applications in automotive, industrial power supplies, and motor control systems. The operating temperature range is -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 31 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1820 pF @ 75 V |
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