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IPD180N10N3GBTMA1

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IPD180N10N3GBTMA1

MOSFET N-CH 100V 43A TO252-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ IPD180N10N3GBTMA1 is an N-channel power MOSFET designed for high-performance applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 43 A at 25°C (Tc). The Rds On is specified at a maximum of 18 mOhm at 33 A and 10 V, with a gate drive range of 6 V to 10 V. Key parameters include a maximum gate charge (Qg) of 25 nC at 10 V and input capacitance (Ciss) of 1800 pF at 50 V. The device offers a maximum power dissipation of 71 W (Tc) and operates within a temperature range of -55°C to 175°C (TJ). Packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount configuration and supplied on Tape & Reel (TR), this MOSFET is suitable for automotive and industrial power management systems. The threshold voltage (Vgs(th)) is a maximum of 3.5 V at 33 µA.

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C43A (Tc)
Rds On (Max) @ Id, Vgs18mOhm @ 33A, 10V
FET Feature-
Power Dissipation (Max)71W (Tc)
Vgs(th) (Max) @ Id3.5V @ 33µA
Supplier Device PackagePG-TO252-3
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)100 V
Gate Charge (Qg) (Max) @ Vgs25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 50 V

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