IPD170N04NGBTMA1
MOSFET N-CH 40V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD170N04NGBTMA1 is a 40 V N-channel power MOSFET designed for high-efficiency switching applications. This component features a low Rds(on) of 17 mOhm at 30 A and 10 V Vgs, minimizing conduction losses. With a continuous drain current capability of 30 A at 25°C and a maximum power dissipation of 31 W, it is suitable for demanding power management tasks. The device utilizes advanced OptiMOS™ technology for superior performance. Key electrical parameters include a gate charge of 11 nC and input capacitance of 880 pF at 20 V. The TO-252-3 (PG-TO252-3) surface mount package facilitates integration into compact designs. Operating temperature range is from -55°C to 175°C. This MOSFET is commonly employed in automotive power systems, industrial motor control, and high-power DC-DC converters.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 10µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 880 pF @ 20 V |
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