IPD160N04LGBTMA1
MOSFET N-CH 40V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies' OptiMOS™ IPD160N04LGBTMA1 is a 40V N-channel power MOSFET. This component features a low on-resistance of 16mOhm at 30A and 10V Vgs, with a continuous drain current capability of 30A at 25°C. The device offers a gate charge of 15 nC maximum at 10V Vgs and input capacitance of 1200 pF maximum at 20V Vds. Designed for surface mount applications, it is housed in a TO-252-3, DPAK package. With a maximum power dissipation of 31W at 25°C, this MOSFET is suitable for high-efficiency power conversion in automotive and industrial applications. The operating temperature range is -55°C to 175°C.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 10µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 20 V |
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