IPD15N06S2L64ATMA1
MOSFET N-CH 55V 19A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD15N06S2L64ATMA1 is a surface mount N-Channel Power MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 55V and a continuous drain current (Id) of 19A at 25°C, with a maximum power dissipation of 47W. The Rds(on) is specified at a maximum of 64mOhm at 13A and 10V Vgs. Key parameters include a maximum gate charge (Qg) of 13 nC at 10V and input capacitance (Ciss) of 354 pF at 25V. The device is housed in a PG-TO252-3-11 (TO-252-3, DPAK) package and operates across a temperature range of -55°C to 175°C. This MOSFET is utilized in industrial, automotive, and consumer electronics sectors. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 64mOhm @ 13A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 14µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 354 pF @ 25 V |
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