IPD14N06S280ATMA1
MOSFET N-CH 55V 17A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD14N06S280ATMA1 is an N-channel Power MOSFET designed for high-efficiency power management applications. This device features a Drain-Source Voltage (Vdss) of 55 V and a continuous Drain Current (Id) of 17 A at 25°C (Tc), with a maximum power dissipation of 47 W (Tc). The Rds(on) is specified at a maximum of 80 mOhm at 7 A and 10 V gate drive. Key characteristics include a Gate Charge (Qg) of 10 nC at 10 V and an Input Capacitance (Ciss) of 293 pF at 25 V. The component utilizes surface mount technology, packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 (PG-TO252-3-11) format, supplied on tape and reel. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive, industrial, and consumer electronics power conversion systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 17A (Tc) |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 14µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 55 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 293 pF @ 25 V |
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