IPD144N06NGBTMA1
MOSFET N-CH 60V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD144N06NGBTMA1 is a 60V N-Channel power MOSFET designed for demanding automotive and industrial applications. Featuring a low on-resistance of 14.4mOhm at 50A and 10V Vgs, this component offers efficient power switching. The device boasts a continuous drain current capability of 50A (Tc) and a maximum power dissipation of 136W (Tc). Key parameters include a gate charge (Qg) of 54 nC at 10V and an input capacitance (Ciss) of 1900 pF at 30V. The TO-252-3 (DPAK) surface mount package ensures suitability for automated assembly processes, operating within a temperature range of -55°C to 175°C. This MOSFET is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 14.4mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 80µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 54 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 30 V |
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