IPD13N03LA G
MOSFET N-CH 25V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD13N03LA-G is an N-Channel Power MOSFET designed for high-efficiency applications. Featuring a drain-source voltage (Vdss) of 25 V and a continuous drain current (Id) of 30 A at 25°C (Tc), this component offers a low on-resistance (Rds On) of 12.8 mOhm maximum at 30 A and 10 V. The device supports gate drive voltages from 4.5 V to 10 V, with a threshold voltage (Vgs(th)) of 2 V maximum at 20 µA. Key electrical characteristics include a gate charge (Qg) of 8.3 nC maximum at 5 V and input capacitance (Ciss) of 1043 pF maximum at 15 V. With a maximum power dissipation of 46 W (Tc) and an operating temperature range of -55°C to 175°C (TJ), the IPD13N03LA-G is suitable for surface-mount applications utilizing the TO-252-3, DPAK package. This component is commonly employed in power management, automotive, and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.8mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 46W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1043 pF @ 15 V |
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