IPD135N08N3GBTMA1
MOSFET N-CH 80V 45A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD135N08N3GBTMA1 is an N-channel Power MOSFET designed for demanding applications. This device features a 80 V drain-source voltage (Vdss) and supports continuous drain current (Id) up to 45 A at 25°C (Tc). The low on-resistance (Rds On) is specified at a maximum of 13.5 mOhm at 45 A and 10 V gate-source voltage (Vgs). With a maximum power dissipation of 79 W (Tc), it is suitable for high-power switching and conversion tasks. The MOSFET is housed in a TO-252-3 (DPAK) surface mount package, facilitating integration into compact PCB designs. Key characteristics include a maximum gate charge (Qg) of 25 nC at 10 V and input capacitance (Ciss) of 1730 pF at 40 V. This component finds utility in automotive, industrial power management, and power supply applications. The operating temperature range is -55°C to 175°C (TJ), and it is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 45A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 45A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 79W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 33µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1730 pF @ 40 V |
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