IPD135N03LGBTMA1
LV POWER MOSManufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ 3 series N-Channel Power MOSFET, part number IPD135N03LGBTMA1, offers a 30V drain-source voltage. This surface mount component in a PG-TO252-3 (DPAK) package features a continuous drain current of 30A at 25°C (Tc) and a maximum power dissipation of 31W (Tc). Key electrical characteristics include a maximum on-resistance of 13.5mOhm at 30A and 10V, with a gate charge of 10 nC at 10V. Input capacitance (Ciss) is a maximum of 1000 pF at 15V. The device operates across a temperature range of -55°C to 175°C (TJ). This component is suitable for applications in automotive and industrial power management.
Additional Information
Series: OptiMOS™ 3RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 13.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 31W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 15 V |
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