IPD12N03LB G
MOSFET N-CH 30V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD12N03LB-G is an N-Channel Power MOSFET designed for high-efficiency switching applications. This device features a Drain-Source Voltage (Vdss) of 30 V and a continuous Drain Current (Id) of 30 A at 25°C (Tc), with a maximum power dissipation of 52 W (Tc). The low on-resistance of 11.6 mOhm at 30 A and 10 V Vgs makes it suitable for demanding power conversion tasks.
Key parameters include a Gate Charge (Qg) of 11 nC at 5 V and an input capacitance (Ciss) of 1300 pF at 15 V. The MOSFET operates within a wide temperature range of -55°C to 175°C (TJ). The TO-252-3, DPAK (SC-63) package facilitates surface mounting. This component is frequently utilized in automotive systems, industrial power supplies, and consumer electronics where robust power switching is critical. The drive voltage range for optimal on-resistance is 4.5 V to 10 V, with a maximum Gate-Source Voltage (Vgs) of ±20 V. The threshold voltage (Vgs(th)) is 2V at 20µA.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 11.6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 15 V |
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