IPD12CNE8N G
MOSFET N-CH 85V 67A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ N-Channel MOSFET, part number IPD12CNE8N-G, offers an 85V drain-source voltage and a continuous drain current of 67A at 25°C (Tc). This surface mount device, housed in a TO-252-3 (DPAK) package, features a maximum power dissipation of 125W (Tc) and a low on-resistance of 12.4mOhm at 67A and 10V gate drive. Key parameters include a gate charge (Qg) of 64 nC at 10V and input capacitance (Ciss) of 4340 pF at 40V. The operating temperature range is -55°C to 175°C (TJ). This component is commonly utilized in power management applications across automotive, industrial, and consumer electronics sectors. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 67A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 83µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 85 V |
| Gate Charge (Qg) (Max) @ Vgs | 64 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4340 pF @ 40 V |
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