IPD12CN10NGATMA1
MOSFET N-CH 100V 67A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD12CN10NGATMA1 is a surface mount N-channel power MOSFET. This component offers a 100 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 67 A at 25°C (Tc). The device features a low on-resistance (Rds On) of 12.4 mOhm maximum at 67 A and 10 V gate drive. With a maximum power dissipation of 125 W (Tc), it is suitable for demanding applications. Key parameters include a gate charge (Qg) of 65 nC maximum at 10 V and input capacitance (Ciss) of 4320 pF maximum at 50 V. Operating temperature ranges from -55°C to 175°C (TJ). The package is a TO-252-3, DPAK (SC-63), supplied in tape and reel. This MOSFET is utilized in various industrial power conversion and control applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 67A (Tc) |
| Rds On (Max) @ Id, Vgs | 12.4mOhm @ 67A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 83µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4320 pF @ 50 V |
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