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IPD127N06LGBTMA1

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IPD127N06LGBTMA1

MOSFET N-CH 60V 50A TO252-3

Manufacturer: Infineon Technologies

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Infineon Technologies OptiMOS™ IPD127N06LGBTMA1 is an N-Channel power MOSFET designed for demanding applications. This device features a 60V drain-source voltage (Vdss) and supports a continuous drain current of 50A at 25°C (Tc). With a maximum on-resistance (Rds On) of 12.7mOhm at 50A and 10V Vgs, it offers excellent conduction efficiency. The MOSFET has a gate charge (Qg) of 69nC at 10V and input capacitance (Ciss) of 2300pF at 30V. It supports drive voltages from 4.5V to 10V and has a maximum gate-source voltage (Vgs) of ±20V. The power dissipation is rated at 136W (Tc). This component is housed in a surface mount TO-252-3, DPAK package and is supplied on a tape and reel. It operates across an industrial temperature range of -55°C to 175°C (TJ). This MOSFET is suitable for use in automotive and industrial power switching applications.

Additional Information

Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C50A (Tc)
Rds On (Max) @ Id, Vgs12.7mOhm @ 50A, 10V
FET Feature-
Power Dissipation (Max)136W (Tc)
Vgs(th) (Max) @ Id2V @ 80µA
Supplier Device PackagePG-TO252-3
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)60 V
Gate Charge (Qg) (Max) @ Vgs69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2300 pF @ 30 V

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