IPD10N03LA G
MOSFET N-CH 25V 30A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD10N03LA-G is a N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 25 V drain-source voltage (Vdss) and a continuous drain current (Id) of 30 A at 25°C (Tc), with a maximum power dissipation of 52 W (Tc). The low on-resistance (Rds On) is specified at 10.4 mOhm at 30 A and 10 V gate-source voltage (Vgs).
The IPD10N03LA-G supports a wide gate drive voltage range from 4.5 V to 10 V. Key parameters include a gate charge (Qg) of 11 nC (max) at 5 V Vgs and an input capacitance (Ciss) of 1358 pF (max) at 15 V Vds. With an operating temperature range of -55°C to 175°C (TJ), this MOSFET is suitable for demanding environments. The component is offered in a TO-252-3, DPAK package, suitable for surface mounting, and supplied on tape and reel. Applications span automotive, industrial power supplies, and motor control systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.4mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 52W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 20µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 25 V |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1358 pF @ 15 V |
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