IPD105N04LGBTMA1
MOSFET N-CH 40V 40A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD105N04LGBTMA1 is an N-Channel Power MOSFET designed for efficient power management. This device features a Drain-Source Voltage (Vdss) of 40V and a continuous Drain current (Id) of 40A (Tc) at 25°C. The low on-resistance, specified at a maximum of 10.5mOhm at 40A and 10V Vgs, is achieved with a drive voltage range of 4.5V to 10V. Key parameters include a Gate Charge (Qg) of 23 nC (max) at 10V Vgs and an input capacitance (Ciss) of 1900 pF (max) at 20V Vds. The component offers a maximum power dissipation of 42W (Tc) and operates within an extended temperature range of -55°C to 175°C (TJ). Supplied in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, this device is suitable for surface mount applications. It finds utility in various demanding sectors including automotive and industrial power systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 40A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 14µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 20 V |
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