IPD105N03LGATMA1
MOSFET N-CH 30V 35A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD105N03LGATMA1 is an N-channel MOSFET designed for high-performance applications. This component features a 30 V drain-source voltage (Vdss) and a continuous drain current (Id) of 35 A at 25°C (Tc). The low on-resistance (Rds On) of 10.5 mOhm at 30 A and 10 V gate-source voltage (Vgs) ensures efficient power delivery. With a maximum power dissipation of 38 W (Tc), it is suitable for demanding thermal environments. The device utilizes surface mount technology, packaged in a PG-TO252-3-11 (TO-252-3, DPAK) configuration. Key parameters include a gate charge (Qg) of 14 nC (Max) at 10 V and input capacitance (Ciss) of 1500 pF (Max) at 15 V. Operating temperature ranges from -55°C to 175°C (TJ). This MOSFET is commonly found in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 10.5mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 38W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 15 V |
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