IPD100N06S403ATMA1
MOSFET N-CH 60V 100A TO252-3-11Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD100N06S403ATMA1 is a 60 V N-channel power MOSFET in a PG-TO252-3-11 surface mount package. This device features a maximum continuous drain current of 100 A at 25°C (Tc) and a low on-resistance of 3.5 mOhm at 100 A and 10 V gate drive. The maximum power dissipation is 150 W (Tc). Key electrical parameters include a gate charge (Qg) of 128 nC at 10 V and input capacitance (Ciss) of 10400 pF at 25 V. Operating temperature range is -55°C to 175°C (TJ). This component is suitable for applications in automotive, industrial power supplies, and motor control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.5mOhm @ 100A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 90µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 10400 pF @ 25 V |