IPD096N08N3GBTMA1
MOSFET N-CH 80V 73A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD096N08N3GBTMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a drain-source voltage (Vds) rating of 80V and a continuous drain current (Id) of 73A at 25°C, with a maximum power dissipation of 100W (Tc). The low on-resistance (Rds On) of 9.6mOhm at 46A and 10V gate drive ensures minimal conduction losses. Key characteristics include a gate charge (Qg) of 35 nC maximum at 10V and input capacitance (Ciss) of 2410 pF maximum at 40V. The device is housed in a PG-TO252-3 (DPAK) surface mount package, suitable for demanding environments with an operating temperature range of -55°C to 175°C (TJ). This MOSFET is commonly utilized in automotive, industrial, and power supply applications where robust performance and thermal management are critical.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 73A (Tc) |
| Rds On (Max) @ Id, Vgs | 9.6mOhm @ 46A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 46µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2410 pF @ 40 V |
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