IPD090N03LGBTMA1
MOSFET N-CH 30V 40A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD090N03LGBTMA1 is an N-Channel Power MOSFET designed for efficient power management applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 40A at 25°C. With a maximum on-resistance (Rds On) of 9mOhm at 30A and 10V, it offers low conduction losses. The device supports a gate-source voltage range of ±20V and utilizes a gate charge (Qg) of 15 nC at 10V. Its input capacitance (Ciss) is rated at a maximum of 1600 pF at 15V. The IPD090N03LGBTMA1 is housed in a surface-mount PG-TO252-3 package and can operate within a temperature range of -55°C to 175°C, with a maximum power dissipation of 42W. This MOSFET is suitable for use in automotive and industrial power switching applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 42W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 15 V |
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