IPD088N06N3GBTMA1
MOSFET N-CH 60V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, IPD088N06N3GBTMA1, offers a 60V drain-source voltage and 50A continuous drain current at 25°C (Tc). This surface mount device, packaged in a PG-TO252-3 (DPAK), features a low on-resistance of 8.8mOhm maximum at 50A and 10V Vgs. With a gate charge of 48nC at 10V and input capacitance of 3900pF at 30V, it is suitable for demanding applications. The device has a maximum power dissipation of 71W (Tc) and operates across a temperature range of -55°C to 175°C (TJ). This component is widely utilized in automotive, industrial power supplies, and motor control applications.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 71W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 34µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3900 pF @ 30 V |
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