IPD088N04LGBTMA1
MOSFET N-CH 40V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD088N04LGBTMA1 is a 40V N-Channel Power MOSFET designed for demanding applications. This device features an extremely low on-resistance of 8.8mOhm at 50A and 10V Vgs, minimizing conduction losses. With a continuous drain current capability of 50A (Tc) and a maximum power dissipation of 47W (Tc), it is suitable for high-power switching and power management. The TO-252-3 (DPAK) surface mount package offers efficient thermal performance. Key parameters include a gate charge of 28 nC (Max) at 10V and input capacitance of 2100 pF (Max) at 20V. Operating temperature range is -55°C to 175°C (TJ). This component finds application in automotive, industrial power supplies, and motor control systems.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 8.8mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 47W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 16µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 40 V |
| Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2100 pF @ 20 V |
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