IPD06P004NATMA1
MOSFET P-CH 60V 16.4A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD06P004NATMA1 is a P-Channel MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 60V and a continuous Drain current (Id) of 16.4A at 25°C (Tc). With a maximum power dissipation of 63W (Tc), it is suitable for thermal management in high-power density designs. The Rds On is specified at a maximum of 90mOhm at 16.4A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 27 nC (Max) at 10V and an Input Capacitance (Ciss) of 1100 pF (Max) at 30V. The device operates across a temperature range of -55°C to 175°C (TJ). This MOSFET is housed in a PG-TO252-3 package, commonly known as TO-252-3, DPAK, and is supplied in Tape & Reel (TR) packaging. It finds application in automotive and industrial power management systems.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 16.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 16.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 63W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 710µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1100 pF @ 30 V |
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