IPD06P003NSAUMA1
MOSFET P-CH 60V 22A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel MOSFET, IPD06P003NSAUMA1, offers a 60V drain-source voltage and continuous drain current of 22A (Tc) at 25°C. This surface mount device, housed in a TO-252-3 (DPAK) package, features a maximum power dissipation of 83W (Tc) and a low on-resistance of 65mOhm at 22A, 10V. Key electrical characteristics include a gate charge of 39nC (Max) @ 10V and input capacitance of 1600pF (Max) @ 30V. Designed for robust performance, it operates across a temperature range of -55°C to 175°C (TJ). Applications span automotive, industrial power control, and consumer electronics where efficient switching and power management are critical.
Additional Information
Series: Optimos™RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 22A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1.04mA |
| Supplier Device Package | PG-TO252-3-313 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1600 pF @ 30 V |
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