IPD06P002NSAUMA1
MOSFET P-CH 60V 35A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies IPD06P002NSAUMA1 is a P-Channel Power MOSFET from the OptiMOS™ series. This component features a 60V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 35A at 25°C (Tc). The device offers a maximum on-resistance (Rds On) of 38mOhm at 35A and 10V gate-source voltage (Vgs). With a gate charge (Qg) of 63 nC (max) at 10V and input capacitance (Ciss) of 2500 pF (max) at 30V, it is designed for efficient switching applications. The maximum power dissipation is 125W (Tc). This MOSFET is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 (PG-TO252-3-313) for surface mounting and is supplied on tape and reel. It operates across a temperature range of -55°C to 175°C (TJ). This component is utilized in automotive, industrial, and power supply applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1.7mA |
| Supplier Device Package | PG-TO252-3-313 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 30 V |
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