IPD06P002NATMA1
MOSFET P-CH 60V 35A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Infineon Technologies OptiMOS™ IPD06P002NATMA1 is a P-Channel Power MOSFET with a Drain-to-Source Voltage (Vds) of 60 V. This component features a high continuous drain current of 35 A (Tc) and a maximum power dissipation of 125 W (Tc). The On-Resistance (Rds On) is specified at a maximum of 38 mOhm at 35 A and 10 V gate drive. With a gate charge (Qg) of 63 nC at 10 V and input capacitance (Ciss) of 2500 pF, it is suitable for applications requiring efficient switching. The device operates across a wide temperature range of -55°C to 175°C (TJ) and is available in a TO-252-3 (DPAK) surface mount package, supplied on tape and reel. This MOSFET is commonly utilized in power supply, automotive, and industrial applications.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1.7mA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2500 pF @ 30 V |