IPD06N03LB G
MOSFET N-CH 30V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ N-Channel Power MOSFET, part number IPD06N03LB-G, is designed for high-efficiency power conversion applications. This device features a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 50A at 25°C (Tc), with a maximum power dissipation of 83W (Tc). The low on-resistance is rated at 6.1mOhm maximum at 50A and 10V (Vgs). Key parameters include a gate charge (Qg) of 22 nC maximum at 5V (Vgs) and input capacitance (Ciss) of 2800 pF maximum at 15V (Vds). The MOSFET operates with a 4.5V to 10V drive voltage, and a threshold voltage (Vgs(th)) of 2V maximum at 40µA. Packaged in a TO-252-3 (DPAK) surface mount configuration, this component is suitable for automotive and industrial applications where robust power handling and thermal performance are critical. The operating temperature range is from -55°C to 175°C (TJ).
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.1mOhm @ 50A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 83W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 40µA |
| Supplier Device Package | PG-TO252-3-11 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2800 pF @ 15 V |