IPD068P03L3GBTMA1
MOSFET P-CH 30V 70A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ P-Channel Power MOSFET, part number IPD068P03L3GBTMA1, delivers robust performance with a 30V drain-source voltage and a continuous drain current of 70A (Tc) at 25°C. This surface-mount device, housed in a TO-252-3 (DPAK) package, features a low on-resistance of 6.8mOhm at 70A and 10V Vgs. Maximum power dissipation is rated at 100W (Tc). Key electrical characteristics include a gate charge (Qg) of 91 nC at 10V and input capacitance (Ciss) of 7720 pF at 15V. The device is suitable for operation across a wide temperature range of -55°C to 175°C (TJ). This component finds application in demanding power management solutions across various industries.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 100W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 150µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 91 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7720 pF @ 15 V |
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