IPD068N10N3GBTMA1
MOSFET N-CH 100V 90A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The Infineon Technologies OptiMOS™ IPD068N10N3GBTMA1 is an N-Channel Power MOSFET designed for high-efficiency power conversion applications. This component features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain current (Id) of 90 A at 25°C. With a low on-resistance (Rds On) of 6.8 mOhm at 90 A and 10 V drive, it minimizes conduction losses. The MOSFET offers a maximum power dissipation of 150 W (Tc) and a junction temperature range of -55°C to 175°C. Key parameters include a Gate Charge (Qg) of 68 nC at 10 V and input capacitance (Ciss) of 4910 pF at 50 V. Packaged in a PG-TO252-3 (DPAK) surface mount configuration and supplied on tape and reel, this device is suitable for demanding applications in automotive and industrial sectors.
Additional Information
Series: Optimos™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 90A (Tc) |
| Rds On (Max) @ Id, Vgs | 6.8mOhm @ 90A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 150W (Tc) |
| Vgs(th) (Max) @ Id | 3.5V @ 90µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 4910 pF @ 50 V |
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