IPD060N03LGBTMA1
MOSFET N-CH 30V 50A TO252-3Manufacturer: Infineon Technologies
Categories: Single FETs, MOSFETs
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Infineon Technologies OptiMOS™ IPD060N03LGBTMA1 is a 30V N-Channel Power MOSFET in a PG-TO252-3 package. This surface mount device offers a low on-resistance of 6 mOhm at 30A and 10V Vgs, with a continuous drain current capability of 50A at 25°C. Key electrical characteristics include a gate charge of 30 nC (max) and input capacitance of 2300 pF (max). The device supports a wide operating temperature range from -55°C to 175°C. It is suitable for applications in automotive, industrial power control, and consumer electronics where efficient power switching is required. This component is supplied in Tape & Reel packaging.
Additional Information
Series: Optimos™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 20 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) |
| Rds On (Max) @ Id, Vgs | 6mOhm @ 30A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 56W (Tc) |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PG-TO252-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2300 pF @ 15 V |
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